Publikationen von Dr. Vadim Talalaev

2013

  • Li X., Xiao Y., Yan C., Song J.-W., Talalaev V.G., Schweizer S.L., Piekielska K., Sprafke A., Lee J.-H., Wehrspohn R.B.
    Fast electroless fabrication of uniform mesoporous silicon layers
    Electrochimica Acta 94, 57-61, (2013)
  • Khrebtov A.I., Talalaev, V.G., Werner, P., Danilov V.V., Artemyev M. V., Novikov B.V., Shtrom I.V., Pafnutova A.S., Cirlin G.E.
    Composite system based on CdSe/ZnS quantum dots and GaAs nanowires
    Semiconductors 47 (10), 1346-1350, (2013)
  • J. Schilling, V. Talalaev, A. Tonkikh, B. Fuhrmann, F. Heyroth, and M. Otto
    Enhanced non-radiative recombination in the vicinity of plasma-etched side walls of liminescing Si/Ge-quantum dot structures
    Applied Physics Letters 103, 161106 (2013)
  • A.A Tonkikh, C. Eisenschmidt, V.G. Talalaev, N.D. Zakharov, J. Schilling, G. Schmidt, and P. Werner
    Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing
    Applied Physics Letters 103, 032106 (2013)

2012

  • Tonkikh A.A., Zakharov N.D., Novikov A.V., Kudryavtsev K.E., Talalaev V.G., Fuhrmann B., Leipner H.S., Werner P. ISb mediated formation of Ge/Si quantum dots: Growth and properties.
    Thin Solid Films 520 (8), 3322-3325 (2012)
  • Talalaev V.G., Tonkikh A.A., Zakharov N.D., Senichev A.V., Tomm J.W., Werner P., Novikov B.V., Asryan L.V., Fuhrmann B., Schilling J., Leipner H.S., Bouraulev A.D., Samsonenko Yu.B., Khrebtov A.I., Soshnikov I.P., Cirlin G.E. ILight-emitting tunnel nanostructures based on quantum dots in a Si and GaAs matrix.
    Semiconductors, 46 (11), 1460-1470 (2012)
  • Talalaev V.G., Senichev A.V., Novikov B.V., Tomm J.W., Asryan L.V., Zakharov N.D., Werner P., Bouravleuv A.D., Samsonenko Yu.B., Khrebtov A.I., Soshnikov I.P., Cirlin G.E. Relaxation pathways of excitation in the tunnel-injection structures with quantum dots.
    Newsletter of St. Petersburg University, Ser.4, 3, 34-55 (2012)

2010

  • Novikov B.V., Serov S.Yu., Filosofov N.G., Shtrom I.V., Talalaev V.G., Vyvenko O.F., Ubyivovk E.V., Samsonenko Yu.B., Bouravleuv A.D., Soshnikov I.P., Sibirev N.V., Cirlin G.E., Dubrovskii V.G.
    Photoluminescence properties of GaAs nanowire ensembles with zincblende and wurtzite crystal structure.
    Phys. Stat. Sol. (RRL), 4(7), 175-177 (2010)
  • Talalaev V.G.,Senichev A.V., Novikov B.V., Tomm J.W., Elsaesser T., Zakharov N.D., Werner P., Gösele U., Samsonenko Yu.B., Cirlin G.E. InGaAs tunnel-injection structures with nanobridges: excitation transfer and luminescence kinetics.
    Semiconductors, 44(8), 1050-1058 (2010)
  • Kalem S., Werner P., Talalaev V.G., Becker M., Arthursson Ö., Zakharov
    N.
    Photoluminescence from silicon nanoparticles embedded in ammonium
    silicon hexafluoride

    Nanotechnology, 21, 435701-8 (2010)
  • Smirnov M.B., Talalaev V.G., Novikov B.V., Sarangov S.V., Zakharov N.D., Werner P., Gösele U., Tomm J.W., Cirlin G.E.
    Temperature dependent luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing
    Phys. Stat. Sol (b), 247(2), 347-352 (2010)

Conferences

  • Talalaev V.G., Schilling J., Tonkikh A.A., Zakharov N.D., Werner P.
    Single nanocluster spectroscopy of Si/Ge quantum dot structures. European Materials Research Society Meeting, JP11-14 (Strasbourg, France, June 7-11, 2010)
  • Tonkikh A.A., Werner P., Zakharov N.D., Talalaev V.G.
    Antimony mediated MBE growth and properties of multilayer Ge quantum dot structures on a Si(100).
    European Materials Research Society Meeting, J10-5 (Strasbourg, France, June 7-11, 2010)
  • Talalaev V.G., Senichev A.V., Novikov B.V., Tomm J.W., Zakharov N.D., Werner P., Samsonenko Yu.B., Cirlin G.E.
    InGaAs tunnel-injection nanostructures: transport via nanobridge states versus drift.
    Proceedings of 18th International Symposium Nanostructures: Physics and Technology”, 273-274 (St.Petersburg, Russia, June 21-26, 2010)
  • Novikov B.V., Serov S.Yu., Filosofov N.G., Shtrom I.V., Talalaev V.G., Vyvenko O.F., Ubyivovk E.V., A.S. Bondarenko, Samsonenko Yu.B., Bouravleuv A.D., Soshnikov I.P., Sibirev N.V., Dubrovskii V.G., Cirlin G.E. Photoluminescence of GaAs nanowires of different crystal structures. Proceedings of 18th International Symposium Nanostructures: Physics and Technology”, 234-235 (St.Petersburg, Russia, June 21-26, 2010)
  • Tonkikh A.A., Zakharov N.D., Werner P., Shaleev M.V., Lobanov D.N., Novikov A.V., Talalaev V.G.
    Multilayer structures of Ge/Si nanoislands: The impact of the antimony. Proceedings of 7th International Conference “Silicon-2010”, 197 (N.Novgorod, Russia, July 6-9, 2010)

2009

  • Kalem S., Werner P., Nillson B., Talalaev V.G., Hagberg M., Arthursson Ö., Södervall U.
    Controlled thinning and surface smoothening of silicon nanopillars Nanotechnology, 20, 445303-7 (2009)
  • Jacik A., Muszalski J., Pierscinski K., Bugajski M., Talalaev V.G., Kosmala M.
    Low-temperature grown near surface semiconductor saturable absorber mirror: Design, growth conditions, characterization, and mode-locked operation
    J. Appl. Phys., 106, 053101-8 (2009)

2008

  • Talalaev V.G., Cirlin G.E., Tonkikh A.A., Zakharov N.D., Werner P., Gösele U., Tomm J.W., Elsaesser T.
    Miniband-related 1.4-1.8 mm luminescence of Ge/Si quantum dot superlattices
    In book: “Self assembled semiconductor nanostructures for novel devices in photonics and electronics”. Edited by M. Henini. Published by Elsevier, 324-345 (2008)
    ISBN: 978-0-08-046325-4
  • Talalaev V.G., Tomm J.W., Zakharov N.D., Werner P., Gösele U., Novikov B.V., Sokolov A.S., Samsonenko Y.B., Egorov V A., Cirlin G.E.
    Transient carrier transfer in tunnel injection structures 
    Appl. Phys. Lett., 93, 031105 (2008)
  • Ziegler M., Talalaev V., Tomm J.W., Elsaesser T., Ressel P., Sumpf B., Erbert G.
    Surface recombination and facet heating in high-power diode lasers
    Appl. Phys. Lett., 92, 203506 (2008)

2007

  • Smirnov M.B., Talalaev V.G., Novikov B.V., Sarangov S.V., Tsyrlin G.E., Zakharov N.D.
    Numerical simulation of the temperature dependence of the photoluminescence spectra of InAs/GaAs quantum dots
    Phys. Sol. St., 49 (6), 1184-1190 (2007)
  • Talalaev V.G., Novikov B.V., Sokolov A.S., Strom I.V., Tomm J.W., Zakharov N.D., Werner P., Cirlin G.E., Tonkikh A.A.
    Resonances related to an array of InAs quantum dots and controlled by an external electric field
    Semiconductors, 41 (2), 197-204 (2007)

2006

  • Talalaev V.G., Tomm J.W., Sokolov A.S., Shtrom I.V., Novikov B.V., Winzer A.T., Goldhahn R., Gobsch G., Zakharov N.D., Werner P., Goesele U., Cirlin G.E., Tonkikh A.A., Ustinov V.M., Tarasov G.G.
    Tuning of the interdot resonance in stacked InAs quantum dot arrays by an external electric field
    J. Appl. Phys., 100 (8), 083704/1-7 (2006)
  • Talalaev V.G., Cirlin G.E., Tonkikh A.A., Zakharov N.D., Werner P., Gösele U., Tomm J.W., Elsaesser T.
    Miniband-related 1.4-1.8 mm luminescence of Ge/Si quantum dot superlattices
    Nano. Res. Lett., 1(2), 137-153 (2006)
  • Tonkikh A.A., Cirlin G.E., Polyakov N.K., Samsonenko Y.B., Ustinov V.M., Zakharov N.D., Werner P., Talalaev V.G., Novikov B.V.
    The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxy Semiconductors, 40 (5), 587-591 (2006)
  • Sibirev N.V., Talalaev V.G., Tonkikh A.A., Cirlin G.E., Dubrovskii V.G., Zakharov N.D., Werner P.
    Band structure and photoluminescence of Ge0.8Si0.2/Ge0.1Si0.9 superlattice with vertically correlated quantum dots
    Semiconductors, 40 (2), 224-228 (2006)

2005

  • Talalaev V., Tomm J.W., Elsaesser T., Zeimer U., Fricke J., Knauer A., Kissel H., Weyers M., Tarasov G.G., Grenzer J., Pietsch U.
    Carrier dynamics in laterally strain-modulated InGaAs-quantum wells
    Appl. Phys. Lett., 87(26), 262103/1-3 (2005)
  • Hertel T., Hagen A., Talalaev V., Arnold K., Hennrich F., Kappes M., Rosenthal S., McBride J., Ulbricht H., Flahaut E.
    Spectroscopy of single- and double-wall carbon nanotubes in different environments
    Nano Lett., 5(3), 511-514 (2005)
  • Mazur Y.I., Wang Z.M., Tarasov G.G., Salamo G.J., Tomm J.W., Talalaev V.G., Kissel H.
    Nonresonant tunneling carrier transfer in bilayer asymmetric InAs/GaAs quantum dots
    Phys. Rev. B, 71(23), 235313/1-8 (2005)
  • Lu T.Z., Shen J., Mereu B., Alexe M., Scholz R., Talalaev V., Zacharias M. Electrical behavior of size-controlled Si nanocrystals arranged as single layers
    Appl. Phys. A, 80, 1631-1634 (2005).

2004

  • Talalaev V.G., Tomm J.W., Zakharov N.D., Werner P., Novikov B.V., Cirlin G.E., Samsonenko Y.B., Tonkikh A.A., Egorov V.A., Polyakov N.K., Ustinov V.M.
    Spectroscopy of exciton states of InAs quantum molecules
    Semiconductors, 38 (6), 696-701 (2004)
  • Egorov V.A., Cirlin G.E., Tonkikh A.A., Talalaev V.G., Makarov A.G., Ledentsov N.N., Ustinov V.M., Zakharov N.D., Werner P.
    Si/Ge nanostructures for optoelectronics applications
    Phys. Sol. Stat., 46 (1), 49-55 (2004)

2003

  • Tonkikh A.A., Tsyrlin G.E., Talalaev V.G., Novikov B.V., Egorov V.A., Polyakov N.K., Samsonenko Y.B., Ustinov V.M., Zakharov N.D., Werner P.
    Room temperature 1.5-1.6 μm photoluminescence from InGaAs/GaAs heterostructures grown at low substrate temperature
    Semiconductors, 37 (12), 1406-1410 (2003)
  • Talalaev V.G., Novikov B.V.
    Photoluminescence and excitation transfer in laser structures with quantum dots
    In book: Laser Investigations. – St.Petersburg: SpbSU. –  2, 73-100 (2003)
  • Werner P., Zakharov N.D., Talalaev V.G., Cirlin G.E., Gerth G.
    The generation of an optimised SiGe superlattice: growth, structure and optical properties
    In book: Microscopy of Semiconducting Materials. – Bristol/Philadelphia: IOP Publishing, Serie 180. – 255-258 (2003)
  • Cirlin G.E., Talalaev V.G., Zakharov N.D., Werner P.
    Si/Ge nanostructures for LED
    In book: Towards the First Silicon Laser. – Dordrecht/Boston/London: Kluwer Academic Publishers, NATO Science, Serie II. – 79-88 (2003)
  • Hatami F., Masselink W.T., Schrottke L., Tomm J.W., Talalaev V., Kristukat C., Goni A.R.
    InP quantum dots embedded in GaP: Optical properties and carrier dynamics
    Phys. Rev. B, 67 (8), 085306/1-8 (2003)
  • Cirlin G.E., Talalaev V.G., Egorov V.A., Zakharov N.D., Werner P., Ledentsov N.N., Ustinov V.M.
    Nanostructures formed by sub- and close-to-critical Ge inclusions in a Si matrix
    Physica E, 17 (1-4), 131-133 (2003)

2002

  • Malyarchuk V., Tomm J.W., Talalaev V., Lienau C., Rinner F., Baeumler M. Nanoscopic measurements of surface recombination velocity and diffusion length in a semiconductor quantum well
    Appl. Phys. Lett., 81 (2), 346-348 (2002)
  • Cirlin G.E., Talalaev V.G., Zakharov N.D., Egorov V.A., Werner P.
    Room temperature superlinear power dependence of photoluminescence from defect-free Si/Ge quantum dot multilayer structures
    Phys. Stat. Sol.(b), 232 (1), R1-R3 (2002)
  • Talalaev V.G., Novikov B.V., Smirnov M.A., Kachkanov V.V., Gobsch G., Goldhahn R., Winzer A., Cirlin G.E., Egorov V.A., Ustinov V.M. Photoluminescence of isolated quantum dots in metastable InAs arrays
    Nanotechnology, 13 (2), 143-148 (2002)

2001

  • Talalaev V.G.
    Emission properties of metastable InAs quantum dot arrays
    Newsletter of Saint-Petersburg University, Ser.4, 4, (28), 20-41 (2001)
  • Shkolnik A.S., Dogonkin E.B., Evtikhiev V.P., Kotelnikov E.Y., Kudryashov I.V., Talalaev V.G., Novikov B.V., Tomm J.W., Gobsch G.
    Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots grown on misoriented substrates
    Nanotechnology, 12 (4), 512-514 (2001)
  • Talalaev V.G., Novikov B.V., Gobsch G., Goldhahn R., Stein N., Tomm J.W., Maassdorf A., Cirlin G.E., Petrov V.N., Ustinov V.M.
    Radiative recombination features of metastable quantum dot array
    Phys. Stat. Sol.(b), 224 (1), 101-105 (2001)

2000

  • Talalaev V.G., Novikov B.V., Verbin S.Y., Novikov A.B., Dinh Son Thah, Shchur I.V., Gobsch G., Goldhahn R., Stein N., Golombek A., Tsyrlin G.E,. Petrov V.N., Ustinov V.M., Zhukov A.E., Egorov A.Y.
    Recombination emission from InAs quantum dots grown on vicinal GaAs surfaces
    Semiconductors, 34 (4), 453-461 (2000)

1995

  • Tomm J.W., Herrmann K.H., Mocker M., Kelz T., Elsaesser T., Klann R., Novikov B.V., Talalaev V.G., Tudorovskii V.E., Boettner H.
    Stimulated emission in multi-valley lead salts with star degeneracy lifted by strain and magnetic fields
    In book: Narrow Gap Semiconductors. – Bristol/Philandelphia: IOP Publishing, Serie 144. – 135-139 (1995)
  • Tomm J.W., Mocker M., Kelz T., Elsaesser T., Klann R., Novikov B.V., Talalaev V.G., Tudorovskii V.E., Bottner H.
    Threshold of stimulated emission in multivalley lead salts
    J. Appl. Phys., 78 (12), 7247-7254 (1995)

Patents

  • Werner P., Egorov V., Talalaev V., Cirlin G., Zakharov N. Semiconductor structure for use in the near infrared region and a method of manufacturing this semiconductor structure. Patent Granded USA, US 7,119,358 B2 (October 2006)

  • Cirlin G.E., Egorov V.A., Talalaev V.G., Werner P., Zakharov N.D. Semiconductor structure for use in the near infrared region and a method of manufacturing this semiconductor structure. Patent Granted Europe 1424736 (01.05.2007). Patent Granted Germany 602 20 803.3 (01.06.2007)
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