J. Schilling, V. Talalaev, A. Tonkikh, B. Fuhrmann, F. Heyroth, and M. Otto Enhanced non-radiative recombination in the vicinity of plasma-etched side walls of liminescing Si/Ge-quantum dot structures Applied Physics Letters 103, 161106 (2013)
Victor-Tapio Rangel-Kuoppa, Alexander A. Tonkikh, Peter Werner and Wolfgang Jantsch Electron and hole deep levels related to Sb-mediated Ge quantum dots embedded in n-type Si, studied by deep level transient spectroscopy Appl. Phys. Lett. 102, 232106 (2013)
Victor-Tapio Rangel-Kuoppa, Alexander A. Tonkikh, Peter Werner and Wolfgang Jantsch Sb-mediated Ge quantum dots in Ti-oxide-Si diode: negative differential capacitance Sci. Technol. Adv. Mater. 14, 035005 (2013)
V.Ya. Aleshkin, A.A. Dubinov, M.N. Drozdov, B.N. Zvonkov, K.E. Kudryavtsev, A.A Tonkikh, A.N. Yablonskiy, and P. Werner Structural and Optical Properties of GaAs-Based Heterostructures with Ge and Ge/InGaAs Quantum Wells Semiconductors 47, 636-640 (2013)
A.A Tonkikh, C. Eisenschmidt, V.G. Talalaev, N.D. Zakharov, J. Schilling, G. Schmidt, and P. Werner Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing Applied Physics Letters 103, 032106 (2013)
2012
Tonkikh A.A., Zakharov N.D., Novikov A.V., Kudryavtsev K.E., Talalaev V.G., Fuhrmann B., Leipner H.S., Werner P. ISb mediated formation of Ge/Si quantum dots: Growth and properties. Thin Solid Films 520 (8), 3322-3325 (2012)
Talalaev V.G., Tonkikh A.A., Zakharov N.D., Senichev A.V., Tomm J.W., Werner P., Novikov B.V., Asryan L.V., Fuhrmann B., Schilling J., Leipner H.S., Bouraulev A.D., Samsonenko Yu.B., Khrebtov A.I., Soshnikov I.P., Cirlin G.E. Light-emitting tunnel nanostructures based on quantum dots in a Si and GaAs matrix. Semiconductors, 46 (11), 1460-1470 (2012)