Li X., Xiao Y., Yan C., Song J.-W., Talalaev V.G., Schweizer S.L., Piekielska K., Sprafke A., Lee J.-H., Wehrspohn R.B. Fast electroless fabrication of uniform mesoporous silicon layers Electrochimica Acta 94, 57-61, (2013)
Khrebtov A.I., Talalaev, V.G., Werner, P., Danilov V.V., Artemyev M. V., Novikov B.V., Shtrom I.V., Pafnutova A.S., Cirlin G.E. Composite system based on CdSe/ZnS quantum dots and GaAs nanowires Semiconductors 47 (10), 1346-1350, (2013)
Kalem S., Werner P., Talalaev, V. Near-IR photoluminescence from Si/Ge nanowire-grown silicon wafers: effect of HF treatment Appl. Phys. A 112 (3), 561-567 (2013)
J. Schilling, V. Talalaev, A. Tonkikh, B. Fuhrmann, F. Heyroth, and M. Otto Enhanced non-radiative recombination in the vicinity of plasma-etched side walls of liminescing Si/Ge-quantum dot structures Applied Physics Letters 103, 161106 (2013)
A.A Tonkikh, C. Eisenschmidt, V.G. Talalaev, N.D. Zakharov, J. Schilling, G. Schmidt, and P. Werner Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing Applied Physics Letters 103, 032106 (2013)
2012
Tonkikh A.A., Zakharov N.D., Novikov A.V., Kudryavtsev K.E., Talalaev V.G., Fuhrmann B., Leipner H.S., Werner P. ISb mediated formation of Ge/Si quantum dots: Growth and properties. Thin Solid Films 520 (8), 3322-3325 (2012)
Talalaev V.G., Tonkikh A.A., Zakharov N.D., Senichev A.V., Tomm J.W., Werner P., Novikov B.V., Asryan L.V., Fuhrmann B., Schilling J., Leipner H.S., Bouraulev A.D., Samsonenko Yu.B., Khrebtov A.I., Soshnikov I.P., Cirlin G.E. Light-emitting tunnel nanostructures based on quantum dots in a Si and GaAs matrix. Semiconductors, 46 (11), 1460-1470 (2012)
Talalaev V.G., Senichev A.V., Novikov B.V., Tomm J.W., Asryan L.V., Zakharov N.D., Werner P., Bouravleuv A.D., Samsonenko Yu.B., Khrebtov A.I., Soshnikov I.P., Cirlin G.E. Relaxation pathways of excitation in the tunnel-injection structures with quantum dots. Newsletter of St. Petersburg University, Ser.4, 3, 34-55 (2012)
Kalem S., Werner P., Talalaev V.G., Becker M., Arthursson Ö., Zakharov N. Photoluminescence from silicon nanoparticles embedded in ammonium silicon hexafluoride Nanotechnology, 21, 435701-8 (2010)
Smirnov M.B., Talalaev V.G., Novikov B.V., Sarangov S.V., Zakharov N.D., Werner P., Gösele U., Tomm J.W., Cirlin G.E. Temperature dependent luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing Phys. Stat. Sol (b), 247(2), 347-352 (2010)
Conferences
Talalaev V.G., Schilling J., Tonkikh A.A., Zakharov N.D., Werner P. Single nanocluster spectroscopy of Si/Ge quantum dot structures. European Materials Research Society Meeting, JP11-14 (Strasbourg, France, June 7-11, 2010)
Tonkikh A.A., Werner P., Zakharov N.D., Talalaev V.G. Antimony mediated MBE growth and properties of multilayer Ge quantum dot structures on a Si(100). European Materials Research Society Meeting, J10-5 (Strasbourg, France, June 7-11, 2010)
Talalaev V.G., Senichev A.V., Novikov B.V., Tomm J.W., Zakharov N.D., Werner P., Samsonenko Yu.B., Cirlin G.E. InGaAs tunnel-injection nanostructures: transport via nanobridge states versus drift. Proceedings of 18th International Symposium Nanostructures: Physics and Technology”, 273-274 (St.Petersburg, Russia, June 21-26, 2010)
Novikov B.V., Serov S.Yu., Filosofov N.G., Shtrom I.V., Talalaev V.G., Vyvenko O.F., Ubyivovk E.V., A.S. Bondarenko, Samsonenko Yu.B., Bouravleuv A.D., Soshnikov I.P., Sibirev N.V., Dubrovskii V.G., Cirlin G.E. Photoluminescence of GaAs nanowires of different crystal structures. Proceedings of 18th International Symposium Nanostructures: Physics and Technology”, 234-235 (St.Petersburg, Russia, June 21-26, 2010)
Tonkikh A.A., Zakharov N.D., Werner P., Shaleev M.V., Lobanov D.N., Novikov A.V., Talalaev V.G. Multilayer structures of Ge/Si nanoislands: The impact of the antimony. Proceedings of 7th International Conference “Silicon-2010”, 197 (N.Novgorod, Russia, July 6-9, 2010)
2009
Kalem S., Werner P., Nillson B., Talalaev V.G., Hagberg M., Arthursson Ö., Södervall U. Controlled thinning and surface smoothening of silicon nanopillarsNanotechnology, 20, 445303-7 (2009)
Jacik A., Muszalski J., Pierscinski K., Bugajski M., Talalaev V.G., Kosmala M. Low-temperature grown near surface semiconductor saturable absorber mirror: Design, growth conditions, characterization, and mode-locked operation J. Appl. Phys., 106, 053101-8 (2009)
Talalaev V.G., Cirlin G.E., Tonkikh A.A., Zakharov N.D., Werner P., Gösele U., Tomm J.W., Elsaesser T. Miniband-related 1.4-1.8 mm luminescence of Ge/Si quantum dot superlattices In book: “Self assembled semiconductor nanostructures for novel devices in photonics and electronics”. Edited by M. Henini. Published by Elsevier, 324-345 (2008) ISBN: 978-0-08-046325-4
Talalaev V.G., Tomm J.W., Zakharov N.D., Werner P., Gösele U., Novikov B.V., Sokolov A.S., Samsonenko Y.B., Egorov V A., Cirlin G.E. Transient carrier transfer in tunnel injection structures Appl. Phys. Lett., 93, 031105 (2008)
Ziegler M., Talalaev V., Tomm J.W., Elsaesser T., Ressel P., Sumpf B., Erbert G. Surface recombination and facet heating in high-power diode lasers Appl. Phys. Lett., 92, 203506 (2008)
2007
Smirnov M.B., Talalaev V.G., Novikov B.V., Sarangov S.V., Tsyrlin G.E., Zakharov N.D. Numerical simulation of the temperature dependence of the photoluminescence spectra of InAs/GaAs quantum dots Phys. Sol. St., 49 (6), 1184-1190 (2007)
Talalaev V.G., Novikov B.V., Sokolov A.S., Strom I.V., Tomm J.W., Zakharov N.D., Werner P., Cirlin G.E., Tonkikh A.A. Resonances related to an array of InAs quantum dots and controlled by an external electric field Semiconductors, 41 (2), 197-204 (2007)
2006
Talalaev V.G., Tomm J.W., Sokolov A.S., Shtrom I.V., Novikov B.V., Winzer A.T., Goldhahn R., Gobsch G., Zakharov N.D., Werner P., Goesele U., Cirlin G.E., Tonkikh A.A., Ustinov V.M., Tarasov G.G. Tuning of the interdot resonance in stacked InAs quantum dot arrays by an external electric field J. Appl. Phys., 100 (8), 083704/1-7 (2006)
Lu T.Z., Alexe M., Scholz R., Talalaev V.G., Zhang R.J., Zacharias M. Si nanocrystal based memories: Effect of the nanocrystal density J. Appl. Phys., 100 (1), 014310/1-5 (2006)
Saas F., Talalaev V., Griebner U., Tomm J.W., Zorn M., Knigge A., Weyers M. Optically pumped semiconductor disk laser with graded and step indices Appl. Phys. Lett., 89(15),151120/1-3 (2006)
Talalaev V.G., Cirlin G.E., Tonkikh A.A., Zakharov N.D., Werner P., Gösele U., Tomm J.W., Elsaesser T. Miniband-related 1.4-1.8 mm luminescence of Ge/Si quantum dot superlattices Nano. Res. Lett., 1(2), 137-153 (2006)
Tonkikh A.A., Cirlin G.E., Talalaev V.G., Zakharov N.D., Werner P. Room temperature electroluminescence from multilayer GeSi heterostructures Phys. Stat. Sol (a), 203(6), 1390-1394 (2006)
Tonkikh A.A., Cirlin G.E., Polyakov N.K., Samsonenko Y.B., Ustinov V.M., Zakharov N.D., Werner P., Talalaev V.G., Novikov B.V. The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxySemiconductors, 40 (5), 587-591 (2006)
Sibirev N.V., Talalaev V.G., Tonkikh A.A., Cirlin G.E., Dubrovskii V.G., Zakharov N.D., Werner P. Band structure and photoluminescence of Ge0.8Si0.2/Ge0.1Si0.9 superlattice with vertically correlated quantum dots Semiconductors, 40 (2), 224-228 (2006)
2005
Talalaev V., Tomm J.W., Elsaesser T., Zeimer U., Fricke J., Knauer A., Kissel H., Weyers M., Tarasov G.G., Grenzer J., Pietsch U. Carrier dynamics in laterally strain-modulated InGaAs-quantum wells Appl. Phys. Lett., 87(26), 262103/1-3 (2005)
Hertel T., Hagen A., Talalaev V., Arnold K., Hennrich F., Kappes M., Rosenthal S., McBride J., Ulbricht H., Flahaut E. Spectroscopy of single- and double-wall carbon nanotubes in different environments Nano Lett., 5(3), 511-514 (2005)
Mazur Y.I., Wang Z.M., Tarasov G.G., Salamo G.J., Tomm J.W., Talalaev V.G., Kissel H. Nonresonant tunneling carrier transfer in bilayer asymmetric InAs/GaAs quantum dots Phys. Rev. B, 71(23), 235313/1-8 (2005)
Lu T.Z., Shen J., Mereu B., Alexe M., Scholz R., Talalaev V., Zacharias M. Electrical behavior of size-controlled Si nanocrystals arranged as single layers Appl. Phys. A, 80, 1631-1634 (2005).
Mazur Y.I., Wang Z.M., Tarasov G.G., Xiao M., Salamo G.J., Tomm J.W., Talalaev V., Kissel H. Interdot carrier transfer in asymmetric bilayer InAs/GaAs quantum dot structures Appl. Phys. Lett., 86 (2), 063102/1-3 (2005)
2004
Hagen A., Moos G., Talalaev V., Hertel T. Electronic structure and dynamics of optically excited single-wall carbon nanotubes Appl. Phys. A, 78, 1137-1145 (2004)
Talalaev V.G., Tomm J.W., Zakharov N.D., Werner P., Novikov B.V., Cirlin G.E., Samsonenko Y.B., Tonkikh A.A., Egorov V.A., Polyakov N.K., Ustinov V.M. Spectroscopy of exciton states of InAs quantum molecules Semiconductors, 38 (6), 696-701 (2004)
Egorov V.A., Cirlin G.E., Tonkikh A.A., Talalaev V.G., Makarov A.G., Ledentsov N.N., Ustinov V.M., Zakharov N.D., Werner P. Si/Ge nanostructures for optoelectronicsapplications Phys. Sol. Stat., 46 (1), 49-55 (2004)
2003
Zakharov N.D., Talalaev V.G., Werner P., Tonkikh A.A., Cirlin G.E. Room-temperature light emission from a highly strained Si/Ge superlattice Appl. Phys. Lett., 83 (15), 3084-3086 (2003)
Tonkikh A.A., Tsyrlin G.E., Talalaev V.G., Novikov B.V., Egorov V.A., Polyakov N.K., Samsonenko Y.B., Ustinov V.M., Zakharov N.D., Werner P. Room temperature 1.5-1.6 μm photoluminescence from InGaAs/GaAs heterostructures grown at low substrate temperature Semiconductors, 37 (12), 1406-1410 (2003)
Talalaev V.G., Novikov B.V. Photoluminescence and excitation transfer in laser structures with quantum dots In book: Laser Investigations. – St.Petersburg: SpbSU. – 2, 73-100 (2003)
Tonkikh A.A., Talalaev V.G., Zakharov N.D., Cirlin G.E., Ustinov V.M., Werner P. The effect of postgrowth annealing on the structure and optical properties of multilayer Ge/Si heterostructures Technical Physics Letters, 29 ( 9), 739-742 (2003)
Mussler G., Daeweritz L., Ploog K.H., Tomm J.W., Talalaev V. Optimized annealing conditions identified by analysis of radiative recombination in dilute Ga(As,N) Appl. Phys. Lett., 83 (7), 1343-1345 (2003)
Werner P., Zakharov N.D., Talalaev V.G., Cirlin G.E., Gerth G. The generation of an optimised SiGe superlattice: growth, structure and optical properties In book: Microscopy of Semiconducting Materials. – Bristol/Philadelphia: IOP Publishing, Serie 180. – 255-258 (2003)
Cirlin G.E., Talalaev V.G., Zakharov N.D., Werner P. Si/Ge nanostructures for LED In book: Towards the First Silicon Laser. – Dordrecht/Boston/London: Kluwer Academic Publishers, NATO Science, Serie II. – 79-88 (2003)
Talalaev V.G., Cirlin G.E., Tonkikh A.A., Zakharov N.D., Werner P. Room temperature electroluminescence from Ge/Si quantum dots superlattice close to 1.6 μm Phys. Stat. Sol.(a), 198 (1), R4-R6 (2003)
Cirlin G.E., Talalaev V.G., Egorov V.A., Zakharov N.D., Werner P., Ledentsov N.N., Ustinov V.M. Nanostructures formed by sub- and close-to-critical Ge inclusions in a Si matrix Physica E, 17 (1-4), 131-133 (2003)
2002
Malyarchuk V., Tomm J.W., Talalaev V., Lienau C., Rinner F., Baeumler M. Nanoscopic measurements of surface recombination velocity and diffusion length in a semiconductor quantum well Appl. Phys. Lett., 81 (2), 346-348 (2002)
Cirlin G.E., Talalaev V.G., Zakharov N.D., Egorov V.A., Werner P. Room temperature superlinear power dependence of photoluminescence from defect-free Si/Ge quantum dot multilayer structures Phys. Stat. Sol.(b), 232 (1), R1-R3 (2002)
Talalaev V.G., Novikov B.V., Smirnov M.A., Kachkanov V.V., Gobsch G., Goldhahn R., Winzer A., Cirlin G.E., Egorov V.A., Ustinov V.M. Photoluminescence of isolated quantum dots in metastable InAs arrays Nanotechnology, 13 (2), 143-148 (2002)
2001
Talalaev V.G. Emission properties of metastable InAs quantum dot arrays Newsletter of Saint-Petersburg University, Ser.4, 4, (28), 20-41 (2001)
Shkolnik A.S., Dogonkin E.B., Evtikhiev V.P., Kotelnikov E.Y., Kudryashov I.V., Talalaev V.G., Novikov B.V., Tomm J.W., Gobsch G. Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots grown on misoriented substrates Nanotechnology, 12 (4), 512-514 (2001)
Talalaev V.G., Novikov B.V., Gobsch G., Goldhahn R., Stein N., Tomm J.W., Maassdorf A., Cirlin G.E., Petrov V.N., Ustinov V.M. Radiative recombination features of metastable quantum dot array Phys. Stat. Sol.(b), 224 (1), 101-105 (2001)
2000
Talalaev V.G., Novikov B.V., Verbin S.Y., Novikov A.B., Dinh Son Thah, Shchur I.V., Gobsch G., Goldhahn R., Stein N., Golombek A., Tsyrlin G.E,. Petrov V.N., Ustinov V.M., Zhukov A.E., Egorov A.Y. Recombination emission from InAs quantum dots grown on vicinal GaAs surfaces Semiconductors, 34 (4), 453-461 (2000)
1995
Tomm J.W., Herrmann K.H., Mocker M., Kelz T., Elsaesser T., Klann R., Novikov B.V., Talalaev V.G., Tudorovskii V.E., Boettner H. Stimulated emission in multi-valley lead salts with star degeneracy lifted by strain and magnetic fields In book: Narrow Gap Semiconductors. – Bristol/Philandelphia: IOP Publishing, Serie 144. – 135-139 (1995)
Tomm J.W., Mocker M., Kelz T., Elsaesser T., Klann R., Novikov B.V., Talalaev V.G., Tudorovskii V.E., Bottner H. Threshold of stimulated emission in multivalley lead salts J. Appl. Phys., 78 (12), 7247-7254 (1995)
Patents
Werner P., Egorov V., Talalaev V., Cirlin G., Zakharov N. Semiconductor structure for use in the near infrared region and a method of manufacturing this semiconductor structure. Patent Granded USA, US 7,119,358 B2 (October 2006)
Cirlin G.E., Egorov V.A., Talalaev V.G., Werner P., Zakharov N.D. Semiconductor structure for use in the near infrared region and a method of manufacturing this semiconductor structure. Patent Granted Europe 1424736 (01.05.2007). Patent Granted Germany 602 20 803.3 (01.06.2007)